One-transistor one-resistor (1T1R) cell for large-area electronics

Ghenzi, N.; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; Beltrán, M.; Knez, M.; Hueso, L.; Stoliar, P.

Por favor, use este identificador para citar o enlazar este ítem: https://repositorio.uca.edu.ar/handle/123456789/8610

Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Ghenzi, N.	es
dc.contributor.author	Rozenberg, M.	es
dc.contributor.author	Pietrobon, L.	es
dc.contributor.author	Llopis, R.	es
dc.contributor.author	Gay, R.	es
dc.contributor.author	Beltrán, M.	es
dc.contributor.author	Knez, M.	es
dc.contributor.author	Hueso, L.	es
dc.contributor.author	Stoliar, P.	es
dc.date.accessioned	2019-08-21T18:58:58Z	-
dc.date.available	2019-08-21T18:58:58Z	-
dc.date.issued	2018	-
dc.identifier.citation	Ghenzi N, Rozenberg M, Pietrobon L, Llopis R, Gay R, Beltrán M, Knez M, Hueso L, y P. Stoliar. 2018. One-transistor one-resistor (1T1R) cell for large-area electronics [en línea]. Applied Physics Letters 113, 072108. doi: 10.1063/1.5040126 Disponible en: https://repositorio.uca.edu.ar/handle/123456789/8610	es
dc.identifier.issn	1077-3118 (online)	-
dc.identifier.issn	0003-6951 (print)	-
dc.identifier.uri	https://repositorio.uca.edu.ar/handle/123456789/8610	-
dc.description.abstract	Abstrat: We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.	es
dc.format	application/pdf	-
dc.language.iso	eng	es
dc.publisher	AIP Publishing	es
dc.rights	Acceso Abierto. 12 meses de embargo	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/4.0/	*
dc.source	Applied Physics Letters 2018.113:072108	es
dc.subject	CIRCUITOS ELECTRONICOS	es
dc.subject	MICROELECTRONICA	es
dc.subject	TRANSISTORES	es
dc.title	One-transistor one-resistor (1T1R) cell for large-area electronics	es
dc.type	Artículo	es
dc.identifier.doi	10.1063/1.5040126	-
uca.issnrd	1	es
uca.affiliation	Fil: Ghenzi, N. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina	es
uca.affiliation	Fil: Ghenzi, N. Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina	es
uca.affiliation	Fil: Rozenberg, M. Université Paris Sud; Francia	es
uca.affiliation	Fil: Pietrobon, L. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Llopis, R. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Gay, R. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Beltrán, M. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Knez, M. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Knez, M. Basque Foundation for Science. Ikerbasque; España	es
uca.affiliation	Fil: Hueso, L. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Hueso, L. Basque Foundation for Science. Ikerbasque; España	es
uca.affiliation	Fil: Stoliar, P. Nanoscience Corporate Research Center; España	es
uca.affiliation	Fil: Stoliar, P. National Institute of Advanced Industrial Science and Technology; Japón	es
uca.version	publishedVersion	es
item.grantfulltext	open	-
item.fulltext	With Fulltext	-
item.languageiso639-1	en	-
Aparece en las colecciones:	Artículos